STGY80H65DFB datasheet(3/22 Pages) STMICROELECTRONICS

部件名	STGY80H65DFB

功能描述	Trench gate field-stop IGBT, HB series 650 V, 80 A high speed

PDF	22 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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3 / 22 page

DocID024366 Rev 6

3/22

STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0)

650

Continuous collector current at TC = 25 °C

120(1)

Current level is limited by bond wires

Continuous collector current at TC = 100 °C

ICP

(2)

Pulse width limited by maximum junction temperature

Pulsed collector current

240

VGE

Gate-emitter voltage

±20

Continuous forward current at TC = 25 °C

120(1)

Continuous forward current at TC = 100 °C

IFP

(2)

Pulsed forward current

240

PTOT

Total dissipation at TC = 25 °C

469

TSTG

Storage temperature range

- 55 to 150

°C

Operating junction temperature

- 55 to 175

Table 3. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance junction-case IGBT

0.32

°C/W

RthJC

Thermal resistance junction-case diode

0.66

RthJA

Thermal resistance junction-ambient

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