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STGY80H65DFB 数据表(PDF) 9 Page - STMicroelectronics

部件名 STGY80H65DFB
功能描述  Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
PDF  22 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGY80H65DFB 数据表(HTML) 9 Page - STMicroelectronics

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DocID024366 Rev 6
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STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB
Electrical characteris-
22
Figure 20. Reverse recovery current vs. diode
current slope
Figure 21. Reverse recovery time vs. diode
current slope
= 80 A
Irm
80
40
0
0
di/dt(A/μs
(A)
500
1000
1500
VF= 400V, IF= 80A
2000 2500
TJ= 175°C
TJ= 25°C
120
GIPD160920131550FSR
trr
100
50
0
0
di/dt(A/μs
(ns)
500
1000
1500
VF= 400V, IF= 80A
2000 2500
TJ= 175°C
TJ= 25°C
150
200
250
300
350
GIPD160920131557FSR
Figure 22. Reverse recovery charge vs. diode
current slope
Figure 23. Reverse recovery energy vs. diode
current slope
Qrr
2000
1000
0
0
di/dt(A/μs
(nC)
500
1000
1500
VF= 400V, IF= 80A
2000 2500
TJ= 175°C
TJ= 25°C
3000
4000
5000
6000
7000
GIPD160920131602FSR
r
Err
400
200
0
0
di/dt(A/μs
(μJ)
500
1000
1500
VF= 400V, IF= 80A
2000 2500
TJ= 175°C
TJ= 25°C
600
800
1000
1200
GIPD160920131610FSR
Figure 24. Capacitance variations
Figure 25. Collector current vs. switching
frequency
C
1000
100
10
0.1
VCE(V)
(pF)
110
Cies
Coes
Cres
100
10000
GIPD160920131200FSR
40
60
80
100
120
110
Ic [A]
f [kHz]
G
Ω
rectangular current shape,
(duty cycle=0.5, V
CC = 400V, R =10
,
V
GE = 0/15 V, TJ =175°C)
Tc=80°C
Tc=100 °C
140
160
GIPD260520141426FSR



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