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STL40C30H3LL 数据表(PDF) 3 Page - STMicroelectronics |
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STL40C30H3LL 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 19 page ![]() DocID023874 Rev 5 3/19 STL40C30H3LL Electrical ratings 19 1 Electrical ratings Note: For the P-channel MOSFET actual polarity of voltages and current has to be reversed Table 2. Absolute maximum ratings Symbol Parameter Value Unit N-channel P-channel V DS Drain-source voltage (v gs = 0) 30 V V GS Gate- source voltage ±20 V I D (1) 1. The value is rated according to R thj-c Drain current (continuous) at T C = 25°C single operating 40 30 A I D (1) Drain current (continuous) at T C = 100°C single operating 25 18.75 A I D (2) 2. This value is rated according to R thj-pcb Drain current (continuous) at T pcb = 25°C single operating 10 8 A I D (2) Drain current (continuous) at T pcb = 100°C single operating 6.5 5 A I DM (2)(3) 3. Pulse width is limited by safe operating area Drain current (pulsed) 40 32 A P TOT (1) Total dissipation at T C = 25°C 60 W P TOT (2) Total dissipation at T pcb = 25°C 4 W T stg Storage temperature -55 to 150 °C T j Operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter Value Unit R thj-c Thermal resistance junction-case 2.08 °C/W R thj-pcb (1) 1. When mounted on 1 inch² FR-4 board, 2 oz. Cu., t ≤ 10 sec Thermal resistance junction-pcb single operation 32.00 °C/W |
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