DocID023874 Rev 5

5/19

STL40C30H3LL

Electrical characteristics

19

Note:

For the P-channel MOSFET actual polarity of voltages and current has to be reversed

Table 6. Switching times

Symbol

Parameter

Test conditions

Channel Min.

Typ.

Max.

Unit

t

d(on)

Turn-on delay time

V

DD

= 24 V, I

D

= 4 A

R

G

=4.7

Ω, V

GS

= 10 V

Figure 24

N-

4

-

ns

P-

15

-

ns

t

r

Rise time

N-

22

-

ns

P-

15

-

ns

t

d(off)

Turn-off delay time

N-

13

-

ns

P-

24

-

ns

t

f

Fall time

N

-

2.8

-

ns

P-

21

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Channel Min.

Typ.

Max.

Unit

I

SD

Source-drain current

N-

10

A

P-

8

A

I

SDM

(1)

1.

Pulse width limited by safe operating area.

Source-drain current

(pulsed)

N-

40

A

P-

32

A

V

SD

(2)

2.

Pulsed: Pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

I

SD

= 8A, V

GS

= 0

N-

1.1

V

P-

t

rr

Reverse recovery time

I

SD

= 8 A, di/dt = 100 A/μs

V

DD

=16 V, T

j

=150 °C

Figure 26

N-

16.2

ns

P

-

15

ns

Q

rr

Reverse recovery

charge

N-

8.1

nC

P-

6.5

nC

I

RRM

Reverse recovery

current

N-

1

A

P-

0.9

A