Electrical characteristics

STL40C30H3LL

4/19

DocID023874 Rev 5

2

Electrical characteristics

Note:

For the P-channel MOSFET actual polarity of voltages and current has to be reversed

Table 4. On/off states

Symbol

Parameter

Test conditions

Channel Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source

breakdown voltage

I

D

= 250 μA, V

GS

= 0

N

30

V

P

I

DSS

Zero gate voltage

drain current (V

GS

= 0)

V

DS

= 30 V

N

1

μA

P

V

DS

=30 V, T

C

=125 °C

N

10

μA

P

I

GSS

Gate-body leakage

current (V

DS

= 0)

V

GS

= ±20 V

N

±100

nA

P

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 250 μA

N

1V

P

R

DS(on)

Static drain-source

on-resistance

V

GS

= 10 V, I

D

= 4 A

N

0.019

0.021

Ω

P

0.024

0.03

Ω

V

GS

= 4.5 V, I

D

= 4 A

N

0.023

0.028

Ω

P

0.038

0.05

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Channel

Min.

Typ.

Max.

Unit

C

iss

Input capacitance

V

DS

= 24 V, f = 1 MHz,

V

GS

= 0

N

-

475

-

pF

P

-

1450

-

pF

C

oss

Output capacitance

N-

97

-

pF

P

-

178

-

pF

C

rss

Reverse transfer

capacitance

N-

19

-

pF

P

-

120

-

pF

Q

g

Total gate charge

V

DD

=24 V

I

D

=8 A

V

GS

= 4.5 V

(see Figure 25)

N

-

4.6

-

nC

P-

12

-

nC

Q

gs

Gate-source charge

N

-

1.7

-

nC

P

-

4.4

-

nC

Q

gd

Gate-drain charge

N

-

1.9

-

nC

P-

5

-

nC