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STL60P4LLF6 数据表(PDF) 1 Page - STMicroelectronics |
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STL60P4LLF6 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 14 page ![]() December 2014 DocID026840 Rev 2 1/14 This is information on a product in full production. www.st.com STL60P4LLF6 P- channel 40 V, 0.0115 Ω typ.,60 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal schematic diagram Features Order codes VDS RDS(on)max. ID STL60P4LLF6 40 V 0.014 Ω 60 Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Table 1: Device summary Order codes Marking Package Packaging STL60P4LLF6 60P4LLF6 PowerFLA™ 5x6 Tape and reel For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. |
类似零件编号 - STL60P4LLF6 |
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类似说明 - STL60P4LLF6 |
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