STL60P4LLF6

Electrical characteristics

DocID026840 Rev 2

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Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD

(1)

Forward on voltage

-

1.1

V

Reverse recovery time

-

29

ns

Reverse recovery charge

-

27.6

nC

Reverse recovery current

-

1.9

A

Notes:

(1)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

For the P-channel Power MOSFETs the actual polarity of the voltages and the

current must be reversed.