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STL60P4LLF6 数据表(PDF) 3 Page - STMicroelectronics

部件名 STL60P4LLF6
功能描述  P-channel 40 V, 0.0115 Ω typ.,60 A STripFET™ F6 Power MOSFET in a PowerFLAT™ 5x6 package
PDF  14 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL60P4LLF6 数据表(HTML) 3 Page - STMicroelectronics

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STL60P4LLF6
Electrical ratings
DocID026840 Rev 2
3/14
1
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage
40
V
VGS
Gate-source voltage
± 20
V
ID
(1)
Drain current (continuous) at TC = 25 °C
60
A
ID
(1)
Drain current (continuous) at TC = 100 °C
42
A
ID
(1)(3)
Drain current (pulsed)
240
A
ID
(2)
Drain current (continuous) at Tpcb = 25 °C
13
ID
(2)
Drain current (continuous) at Tpcb = 100 °C
9.3
A
IDM
(2)(3)
Drain current (pulsed)
52
A
PTOT
(1)
Total dissipation at TC = 25 °C
100
W
PTOT
(2)
Total dissipation at Tpcb = 25 °C
4.8
W
Derating factor
(2)
0.03
W/°C
Tstg
Storage temperature
- 55 to 175
°C
Tj
Max. operating junction temperature
175
°C
Notes:
(1)
The value is rated according to Rthj-c
(2)
This value is rated according to Rthj-pcb
(3)
Pulse width is limited by safe operating area
Table 3: Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max.
1.5
°C/W
Rthj-pcb
(1)
Thermal resistance junction-pcb, single operation
31.3
°C/W
Notes:
(1)
When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec
For the P-channel Power MOSFETs the actual polarity of the voltages and the
current must be reversed.



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