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STL60P4LLF6 数据表(PDF) 3 Page - STMicroelectronics |
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STL60P4LLF6 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 14 page ![]() STL60P4LLF6 Electrical ratings DocID026840 Rev 2 3/14 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25 °C 60 A ID (1) Drain current (continuous) at TC = 100 °C 42 A ID (1)(3) Drain current (pulsed) 240 A ID (2) Drain current (continuous) at Tpcb = 25 °C 13 ID (2) Drain current (continuous) at Tpcb = 100 °C 9.3 A IDM (2)(3) Drain current (pulsed) 52 A PTOT (1) Total dissipation at TC = 25 °C 100 W PTOT (2) Total dissipation at Tpcb = 25 °C 4.8 W Derating factor (2) 0.03 W/°C Tstg Storage temperature - 55 to 175 °C Tj Max. operating junction temperature 175 °C Notes: (1) The value is rated according to Rthj-c (2) This value is rated according to Rthj-pcb (3) Pulse width is limited by safe operating area Table 3: Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max. 1.5 °C/W Rthj-pcb (1) Thermal resistance junction-pcb, single operation 31.3 °C/W Notes: (1) When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. |
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