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STP7N65M2 数据表(PDF) 1 Page - STMicroelectronics |
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STP7N65M2 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() May 2015 DocID026788 Rev 3 1/18 This is information on a product in full production. www.st.com STP7N65M2, STU7N65M2 N- channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max ID STP7N65M2 650 V 1.15 Ω 5 A STU7N65M2 650 V 1.15 Ω 5 A Extremely low gate charge Excellent output capacitance (Coss) profile 100% avalanche tested Zener-protected Applications Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to the strip layout associated with an improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packaging STP7N65M2 7N65M2 TO-220 Tube STU7N65M2 7N65M2 IPAK Tube 3 2 1 TAB IPAK 1 2 3 TAB TO-220 D(2, TAB) G(1) S(3) AM01476v1_tab |
类似零件编号 - STP7N65M2 |
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类似说明 - STP7N65M2 |
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