STP7N65M2 datasheet(3/18 Pages) STMICROELECTRONICS

部件名	STP7N65M2

功能描述	N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™M2 Power MOSFETs in TO-220 and IPAK packages

PDF	18 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

3 / 18 page

STP7N65M2, STU7N65M2

Electrical ratings

DocID026788 Rev 3

3/18

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

3.2

IDM

(1)

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

dv/dt

(2)

Peak diode recovery voltage slope

V/ns

dv/dt

(3)

MOSFET dv/dt ruggedness

Tstg

Storage temperature

- 55 to 150

°C

Operating junction temperature

Notes:

(1)

Pulse width limited by safe operating area

(2)

ISD ≤ 5 A, di/dt ≤ 400 A/µs; VDSpeak < V(BR)DSS, VDD=400 V

(3)

VDS ≤ 520 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

TO-220

IPAK

Rthj-case

Thermal resistance junction-case max

2.08

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

100

°C/W

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax )

EAS

Single pulse avalanche energy (starting Tj=25°C, ID= IAR; VDD=50 V)

103

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