STP7N65M2 datasheet(4/18 Pages) STMICROELECTRONICS

4 / 18 page

Electrical characteristics

STP7N65M2, STU7N65M2

4/18

DocID026788 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0, ID = 1 mA

650

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 650 V

µA

VGS = 0, VDS = 650 V,

TC=125 °C

100

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = ± 25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 2.5 A

0.98

1.15

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

270

Coss

Output capacitance

14.5

Crss

Reverse transfer

capacitance

0.8

oss eq.

(1)

Equivalent output

capacitance

VDS = 0 to 520 V, VGS = 0

108

Intrinsic gate resistance

f = 1 MHz open drain

Total gate charge

VDD = 520 V, ID = 5 A,

VGS = 10 V

(see Figure 17: "Gate charge

test circuit")

Qgs

Gate-source charge

2.3

Qgd

Gate-drain charge

4.3

Notes:

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on

delay time

VDD = 325 V, ID = 2.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 16: "Switching times test circuit

for resistive load"and Figure 21: "Switching

time waveform" )

Rise time

td(off)

Turn-off

delay time

Fall time

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