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STS10P4LLF6 数据表(PDF) 6 Page - STMicroelectronics |
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STS10P4LLF6 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 14 page ![]() Electrical characteristics (curves) STS10P4LLF6 6/14 DocID025774 Rev 3 3 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance ID 10 1 0.1 1 VDS(V) 10 (A) O pe ra tio n in th is ar ea is Li m ite d by m ax RD S(o n) 10µs 1ms 100µs 0.01 Tj=150 °C Tc=25 °C Single pulse 0.1 GIPG080920141302LM δ Single pulse 0.05 0.02 0.01 0.1 0.2 K 10 tp(s) -5 10 -4 10 -3 10 0.001 0.0001 10 -2 -1 10 0 0.01 0.1 10 1 GIPG0809141324LM VGS 6 4 2 0 0 20 Qg(nC) (V) 8 10 VDD = 20 V ID = 10 A 12 40 60 80 GIPG020920141000LM RDS(on) 12.0 11.5 11.0 0 2 ID(A) (m Ω) 1 3 12.5 VGS=10 V 4 5 13.0 13.5 14.0 9 8 7 6 GIPG080920141345LM |
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