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STS10P4LLF6 数据表(PDF) 3 Page - STMicroelectronics |
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STS10P4LLF6 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 14 page ![]() STS10P4LLF6 Electrical ratings DocID025774 Rev 3 3/14 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate- source voltage ±20 V ID Drain current (continuous) at Tamb = 25 °C 10 A ID Drain current (continuous) at Tamb = 100 °C 5.6 A IDM (1) Drain current (pulsed) 40 A PTOT (1) Total dissipation at Tamb = 25 °C 2.7 W Tstg Storage temperature -55 to 150 °C Tj Operating junction temperature 150 °C Notes: (1) Pulse width limited by safe operating area Table 3: Thermal data Symbol Parameter Value Unit Rthj-amb (1) Thermal resistance junction-ambient 47 °C/W Notes: (1) When mounted on 1 inch² FR- 4 board, 2 oz. Cu., t ≤ 10 sec For the P-channel MOSFET actual polarity of voltages and current have to be reversed |
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