STS10P4LLF6 datasheet(4/14 Pages) STMICROELECTRONICS

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Electrical characteristics

STS10P4LLF6

4/14

DocID025774 Rev 3

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250 µA

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 40 V

µA

VDS = 30 V, TC= 125 °C

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ±20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 3 A

0.0125

0.015

VGS = 4.5 V, ID = 3 A

0.017

0.02

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

3525

Coss

Output capacitance

344

Crss

Reverse transfer

capacitance

238.5

Total gate charge

VDD = 20 V ID = 10 A

VGS = 4.5 V

Qgs

Gate-source charge

11.3

Qgd

Gate-drain charge

13.8

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 20 V, ID = 5 A

RG = 4.7 Ω

VGS = 10 V

49.4

Rise time

60.6

td(off)

Turn-off delay time

170

Fall time

For the P-channel MOSFET actual polarity of voltages and current have to be

reversed

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