STTH60AC06C datasheet(2/13 Pages) STMICROELECTRONICS

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Characteristics

STTH60AC06C

2/13

DocID024886 Rev3

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.1 x IF(AV) + 0.01 IF

(RMS)

Table 2. Absolute ratings (limiting values per diode at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

600

IF(RMS)

Forward rms current

IF(AV)

Average forward current

Per diode

Per device

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

280

Tstg

Storage temperature range

-65 to +175

°C

Maximum operating junction temperature

175

°C

Table 3. Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (TO3P-3L, TO-247, TO-247 LL)

Per diode

0.9

°C/W

Total

0.55

Rth(c)

Coupling (TO3P-3L, TO-247, TO-247 LL)

0.2

Rth(j-c)

Junction to case (TO-3PF)

Per diode

2.8

Total

2.2

Rth(c)

Coupling (TO-3PF)

1.6

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

µA

Tj = 150 °C

400

(2)

Forward voltage drop

Tj = 25 °C

IF = 30 A

1.75

Tj = 150 °C

1.07

1.40

Tj = 25 °C

IF = 60 A

Tj = 150 °C

1.32

1.7

1. Pulse test: tp = 5 ms,  < 2%

2. Pulse test: tp = 380 µs,  < 2%

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