STTH60AC06C datasheet(3/13 Pages) STMICROELECTRONICS

3 / 13 page

DocID024886 Rev3

3/13

STTH60AC06C

Characteristics

Table 5. Dynamic characteristics (per diode)

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 0.5 A, Irr = 0.25 A, IR= 1 A

IF = 1 A, VR = 30 V, dIF/dt = -50 A/µs

IRM

Reverse recovery current

Tj = 125 °C

IF = 30 A, VR = 400 V,

dIF/dt = -100 A/µs

6.5

tfr

Forward recovery time

Tj = 25 °C

IF = 30 A, VFR = 1.5 V,

dIF/dt = +200 A/µs

100

VFP

Forward recovery voltage

2.5

Figure 1. Average forward power dissipation

versus average forward current (per diode)

Figure 2. Forward voltage drop versus forward

current (typical values, per diode)

PF(AV) (W)

d=tp/T

IF(AV)(A)

d = 0.1

d = 0.05

d = 0.2 d = 0.5

d =1

I F (A)

0.1

1.0

10.0

100.0

1000.0

0.0

0.4

0.8

1.2

1.6

2.0

2.4

VF (V)

T = 150 °C

T = 25 °C

Figure 3. Forward voltage drop versus forward

current (maximum values, per diode)

Figure 4. Relative variation of thermal

impedance, junction to case, versus pulse

duration (TO3P-3L, TO-247, TO-247LL)

I F (A)

0.1

1.0

10.0

100.0

1000.0

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

VF (V)

T = 150

°C

T = 25

°C

Zth( j-c) /Rth( j-c)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-04

1.E-03

1.E-02

1.E-01

1.E+00

t (s)

TO3P-3L / TO247

Single pulse

STTH60AC06C 数据表(PDF) 3 Page - STMicroelectronics

STTH60AC06C 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表下载