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T12T 数据表(PDF) 3 Page - STMicroelectronics

部件名 T12T
功能描述  Snubberless™ logic level and standard 12 A Triacs
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

T12T 数据表(HTML) 3 Page - STMicroelectronics

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T12T
Characteristics
8
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrant
T12xxT
Unit
T1210T T1220T T1225T T1235T
IGT
(1)
VD = 12 V RL = 30 Ω
I - II - III
MAX.
10
20
25
35
mA
IV
40
VGT
VD = VDRM, RL = 3.3 kΩ,
Tj = 25 °C
ALL
MAX.
1.3
V
VGD
VD = VDRM, RL = 3.3 kΩ,
Tj = 125 °C
ALL
MIN.
0.2
V
IH
(2)
IT = 500 mA
MAX.
10
15
20
30
mA
IL
IG = 1.2 IGT
I - III
MAX.
20
35
40
50
mA
IV
40
II
30
40
60
80
dV/dt (2)
VD = 67% VDRM, gate open
Tj = 125 °C
MIN.
100
1000
100
2000
V/µs
Tj = 150 °C
(3)
50
500
50
1000
(dI/dt)c (2)
(dV/dt)c = 0.1 V/µs
Tj = 125 °C
MIN.
77
A/ms
(dV/dt)c = 10 V/µs
3
3
Without snubber
6
12
(dV/dt)c = 0.1 V/µs
Tj = 150 °C
(3)
33
(dV/dt)c = 10 V/µs
1
1
Without snubber
3
10
1.
Minimum IGT is guaranteed at 5% of IGT max.
2.
For both polarities of A2 referenced to A1.
3.
Derating information for excess temperature above Tj max.
Table 4. Static characteristics
Symbol
Test conditions
Value
Unit
VT
(1)
ITM = 17 A, tp = 380 µs
Tj = 25 °C
MAX.
1.55
V
VTO
(1)
Threshold voltage
Tj = 125 °C
MAX.
0.85
V
RD
(1)
Dynamic resistance
Tj = 125 °C
MAX.
35
m
Ω
IDRM
IRRM
VDRM = VRRM
Tj = 25 °C
MAX.
5µA
Tj = 125 °C
1
mA
VD = 0.9 x VDRM
Tj = 150 °C
(2)
TYP.
1.9
1.
For both polarities of A2 referenced to A1.
2.
Derating information for excess temperature above Tj max.



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