| 数据搜索系统,热门电子元器件搜索 |
|
T12T 数据表(PDF) 4 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
T12T 数据表(HTML) 4 Page - STMicroelectronics |
|
4 / 8 page ![]() Characteristics T12T 4/8 DocID16487 Rev3 Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 2.6 °C/W Rth(j-a) Junction to ambient (DC) 60 °C/W Figure 1. Maximum power dissipation versus rms on-state current (full cycle) Figure 2. On-state rms current versus case temperature (full cycle) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 012 345678 9 10 11 12 P(W) 180° IT(RMS)(A) α=180° 0 1 2 3 4 5 6 7 8 9 10 11 12 13 0 25 50 75 100 125 IT(RMS)(A) α=180° TC(°C) Figure 3. On-state rms current versus ambient temperature Figure 4. Relative variation of thermal impedance versus pulse duration 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 IT(RMS)(A) α=180° Ta(°C) 1.0E -02 1.0E -01 1.0E+00 1.0E -03 1.0E -02 1.0E -01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 K=[Zth/Rth] Z th(j-c) Z th(j-a) tP(s) Figure 5. On state characteristics (maximum values) Figure 6. Surge peak on state current versus number of cycles 1 10 100 012 3 45 ITM (A) T j=25 °C T j=125 °C T j max : V to = 0.85 V R d = 35 mΩ VTM (V) 0 10 20 30 40 50 60 70 80 90 100 1 10 100 1000 ITSM(A) Repetitive T C=88 °C One cycle t=20ms Number of cycles j Non repetitive T initial=25°C |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |