VIPER0P datasheet(8/36 Pages) STMICROELECTRONICS

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Electrical and thermal ratings

VIPer0P

8/36

DocID028423 Rev 2

Table 4: Avalanche characteristics

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

IAR

Avalanche current

Repetitive and

non-repetitive.

Pulse-width limited by TJmax

0.8

EAS

Single pulse avalanche

energy (1)

IAS = IAR; VDS = 100 V;

Starting TJ = 25 °C

0.5

Notes:

(1)Parameter derived by characterization.

2.1

Electrical characteristics

Tj = -40 to 125 °C, VCC = 9 V (unless otherwise specified).

Table 5: Power section

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VBVDSS

Breakdown voltage

IDRAIN = 1 mA,

VCOMP = SGND, TJ = 25 °C

800

IDSS

Drain-Source leakage

current

VDS = 400 V,

VCOMP = SGND, TJ = 25 °C

µA

RDS(on)

Static drain-source

ON-resistance

IDRAIN = 200 mA, TJ = 25 °C

Ω

IDRAIN = 200 mA, TJ = 125 °C

COSS EQ

Equivalent output

capacitance

VGS = 0; VDS = 0 to 640 V,

TJ = 25 °C

Table 6: Supply section

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

High voltage startup current source

VBVDSS_SU

Breakdown voltage of

startup MOSFET

800

VHV_START

Drain-Source start up

voltage

Startup resistor

VFB > VFB_REF,

VDRAIN = 400 V,

VDRAIN = 600 V

MΩ

ICH1

VCC charging current at

startup

VFB > VFB_REF,

VDRAIN = 100 V,

VCC = 0 V, TJ = 25 °C

0.7

1.3

ICH2

VCC charging current at

startup

VFB > VFB_REF,

VDRAIN = 100 V,

VCC = 1 V, TJ = 25 °C

2.3

3.2

4.1

ICH3 (1)

Max. VCC charging

current in self-supply

VFB > VFB_REF,

VDRAIN = 100 V,

VCC = 6 V, TJ = 25 °C

6.4

7.8

9.2

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