STM32F070CB datasheet(51/83 Pages) STMICROELECTRONICS

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STM32F070CB/RB/C6/F6

Electrical characteristics

6.3.9

PLL characteristics

The parameters given in Table 37 are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 20: General operating

conditions.

6.3.10

Memory characteristics

Flash memory

The characteristics are given at TA = -40 to 85 °C unless otherwise specified.

tsu(LSI)(2)

LSI oscillator startup time

µs

IDDA(LSI)(2) LSI oscillator power consumption

0.75

µA

1. VDDA = 3.3 V, TA = -40 to 85 °C unless otherwise specified.

2. Guaranteed by design, not tested in production.

Table 36. LSI oscillator characteristics(1)

Symbol

Parameter

Min

Typ

Max

Unit

Table 37. PLL characteristics

Symbol

Parameter

Value

Unit

Min

Typ

Max

fPLL_IN

PLL input clock(1)

1. Take care to use the appropriate multiplier factors to obtain PLL input clock values compatible with the

range defined by fPLL_OUT.

1(2)

8.0

24(2)

MHz

PLL input clock duty cycle

40(2)

-60(2)

fPLL_OUT

PLL multiplier output clock

16(2)

-48

MHz

tLOCK

PLL lock time

200(2)

2. Guaranteed by design, not tested in production.

µs

JitterPLL

Cycle-to-cycle jitter

300(2)

Table 38. Flash memory characteristics

Symbol

Parameter

Conditions

Min

Typ

Max(1)

1. Guaranteed by design, not tested in production.

Unit

tprog

16-bit programming time TA = -40 to +85 °C

53.5

µs

tERASE Page erase time (2)

2. Page size is 1KB for STM32F070x6 devices and 2KB for STM32F070xB devices.

TA = -40 to +85 °C

tME

Mass erase time

TA = -40 to +85 °C

IDD

Supply current

Write mode

Erase mode

Vprog

Programming voltage

2.4

3.6

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