STM32L432KB datasheet(79/149 Pages) STMICROELECTRONICS

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IDD(SRAM2)

(4)

Supply current

to be added in

Standby mode

when SRAM2

is retained

1.8 V

173

349

1 009

2 158

4 542

249

527

1604

3402

6908

2.4 V

174

345

1 015

2 163

4 535

271

589

1623

3438

6924

3 V

178

350

1 019

2 148

4 419

277

594

1628

3467

6935

3.6 V

184

352

1 033

2 208

4 610

293

611

1631

3480

6948

IDD(wakeup

from

Standby)

Supply current

during wakeup

from Standby

mode

Wakeup clock is

MSI = 4 MHz.

See (5).

3 V

1.23

---

1. Guaranteed by characterization results, unless otherwise specified.

2. Guaranteed by test in production.

3. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

4. The supply current in Standby with SRAM2 mode is: IDD(Standby) + IDD(SRAM2). The supply current in Standby with RTC with SRAM2 mode is: IDD(Standby + RTC) +

IDD(SRAM2).

5. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 38: Low-power mode wakeup timings.

Table 35. Current consumption in Standby mode (continued)

Symbol

Parameter

Conditions

TYP

MAX(1)

Unit

-VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

Table 36. Current consumption in Shutdown mode

Symbol

Parameter

Conditions

TYP

MAX(1)

Unit

-VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

IDD(Shutdown)

Supply current

in Shutdown

mode

(backup

registers

retained) RTC

disabled

1.8 V

7.82

190

386

1 286

3 854

25.0

255

1721

5052

15543

2.4 V

229

485

1 517

4 431

34.9

270

2085

5878

17639

3 V

44.3

290

634

1 878

5 310

70.1

345

2454

6755

19984

3.6 V

212

397

977

2 516

6 656

119.1

496

2992

7939

22860

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