STM32L432KB datasheet(102/149 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32L432KB STM3L432KC

102/149

DocID028798 Rev 2

6.3.14

I/O port characteristics

General input/output characteristics

Unless otherwise specified, the parameters given in Table 56 are derived from tests

performed under the conditions summarized in Table 20: General operating conditions. All

I/Os are designed as CMOS- and TTL-compliant.

Table 56. I/O static characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VIL(1)

I/O input low level

voltage

1.62 V<VDDIOx<3.6 V

0.3xVDDIOx (2)

I/O input low level

voltage

1.62 V<VDDIOx<3.6 V

0.39xVDDIOx-0.06 (3)

I/O input low level

voltage

1.08 V<VDDIOx<1.62 V

0.43xVDDIOx-0.1 (3)

VIH(1)

I/O input high level

voltage

1.62 V<VDDIOx<3.6 V

0.7xVDDIOx (2)

I/O input high level

voltage

1.62 V<VDDIOx<3.6 V

0.49xVDDIOX+0.26 (3)

I/O input high level

voltage

1.08 V<VDDIOx<1.62 V 0.61xVDDIOX+0.05 (3)

Vhys(3)

TT_xx, FT_xxx and

NRST I/O input

hysteresis

1.62 V<VDDIOx<3.6 V

200

FT_sx

1.08 V<VDDIOx<1.62 V

150

Ilkg

FT_xx input leakage

current(3)

VIN ≤ Max(VDDXXX)(4)

±100

Max(VDDXXX) ≤ VIN ≤

Max(VDDXXX)+1 V(4)(5)

650(3)(6)

Max(VDDXXX)+1 V <

VIN ≤ 5.5 V(3)(5)

200(6)

FT_u and PC3 IO

VIN ≤ Max(VDDXXX) (4)

±150

Max(VDDXXX) ≤ VIN ≤

Max(VDDXXX)+1 V(4)

2500(3)(7)

Max(VDDXXX)+1 V <

VIN ≤ 5.5 V(4)(5)(7)

250(7)

TT_xx input leakage

current

VIN ≤ Max(VDDXXX)(6)

±150

Max(VDDXXX) ≤ VIN <

3.6 V(6)

2000(3)

RPU

Weak pull-up

equivalent resistor (8)

VIN = VSS

kΩ

RPD

Weak pull-down

equivalent resistor(8)

VIN = VDDIOx

kΩ

CIO

I/O pin capacitance

1. Refer to Figure 17: I/O input characteristics.

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