Philips Semiconductors

Product specification

Rectifier diodes

BYV42E, BYV42EB series

ultrafast, rugged

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

V

• Fast switching

• Soft recovery characteristic

V

• Reverse surge capability

• High thermal cycling performance

I

• Low thermal resistance

I

t

GENERAL DESCRIPTION

Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power

supplies.

The BYV42E series is supplied in the SOT78 conventional leaded package.

The BYV42EB series is supplied in the SOT404 surface mounting package.

PINNING

SOT78 (TO220AB)

SOT404

PIN

DESCRIPTION

1

anode 1 (a)

2

cathode (k)

1

3

anode 2 (a)

tab

cathode (k)

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

BYV42E / BYV42EB

-150

-200

V

RRM

Peak repetitive reverse voltage

-

150

200

V

V

RWM

Crest working reverse voltage

-

150

200

V

V

R

Continuous reverse voltage

T

-

150

200

V

I

O(AV)

Average rectified output current square wave

-

30

A

(both diodes conducting)

δ = 0.5; T

I

FRM

Repetitive peak forward current t = 25

µs; δ = 0.5;

-

30

A

per diode

T

I

FSM

Non-repetitive peak forward

t = 10 ms

-

150

A

current per diode

t = 8.3 ms

-

160

A

sinusoidal; with reapplied

V

RWM(max)

I

RRM

Repetitive peak reverse current t

-

0.2

A

per diode

I

RSM

Non-repetitive peak reverse

t

-

0.2

A

current per diode

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction temperature

-

150

˚C

1. It is not possible to make connection to pin 2 of the SOT404 package

2. SOT78 package, For output currents in excess of 20 A, the cathode connection should be made to the mounting

tab.

k

a1

a2

13

2

13

tab

2

12 3

tab

July 1998

1

Rev 1.200