Philips Semiconductors

Product specification

Rectifier diodes

BYV42E, BYV42EB series

ultrafast, rugged

Fig.7. Maximum t

Fig.8. Maximum I

Fig.9. Typical and maximum forward characteristic

I

Fig.10. Maximum Q

Fig.11. Transient thermal impedance; per diode;

Z

1

10

trr / ns

1

10

100

1000

100

dIF/dt (A/us)

IF=1A

IF=20A

100

10

1.0

1.0

10

100

-dIF/dt (A/us)

Qs / nC

IF=20A

10A

5A

2A

1A

10

1

0.1

0.01

Irrm / A

1

10

100

-dIF/dt (A/us)

IF=1A

IF=20A

1us

10us

100us

1ms

10ms

100ms

1s

10s

0.001

0.01

0.1

1

10

BYV42E

pulse width, tp (s)

Transient thermal impedance, Zth j-mb (K/W)

D =

T

T

P

t

D

0

VF / V

50

40

30

20

10

0

0.5

1.5

1.0

Tj = 150 C

Tj = 25 C

IF / A

max

typ

July 1998

4

Rev 1.200