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BYV42EB 数据表(PDF) 2 Page - NXP Semiconductors

部件名 BYV42EB
功能描述  Rectifier diodes ultrafast, rugged
PDF  7 Pages
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制造商  PHILIPS [NXP Semiconductors]
网页  http://www.nxp.com
标志 PHILIPS - NXP Semiconductors

BYV42EB 数据表(HTML) 2 Page - NXP Semiconductors

  BYV42EB Datasheet HTML 1Page - NXP Semiconductors BYV42EB Datasheet HTML 2Page - NXP Semiconductors BYV42EB Datasheet HTML 3Page - NXP Semiconductors BYV42EB Datasheet HTML 4Page - NXP Semiconductors BYV42EB Datasheet HTML 5Page - NXP Semiconductors BYV42EB Datasheet HTML 6Page - NXP Semiconductors BYV42EB Datasheet HTML 7Page - NXP Semiconductors  
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Philips Semiconductors
Product specification
Rectifier diodes
BYV42E, BYV42EB series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
Human body model;
-
8
kV
capacitor voltage
C = 250 pF; R = 1.5 k
Ω
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
per diode
-
-
2.4
K/W
mounting base
both diodes
-
-
1.4
K/W
R
th j-a
Thermal resistance junction to
SOT78 package, in free air
-
60
-
K/W
ambient
SOT404 and SOT428 packages,
-
50
-
K/W
pcb mounted, minimum footprint,
FR4 board
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j = 25 ˚C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F = 15 A; Tj = 150˚C
-
0.78
0.85
V
I
F = 15 A
-
0.95
1.05
V
I
F = 30 A
-
1.00
1.20
V
I
R
Reverse current
V
R = VRWM; Tj = 100 ˚C
-
0.5
1
mA
V
R = VRWM
-
10
100
µA
Q
s
Reverse recovery charge
I
F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs-
6
15
nC
t
rr1
Reverse recovery time
I
F = 1 A; VR ≥ 30 V;
-
20
28
ns
-dI
F/dt = 100 A/µs
t
rr2
Reverse recovery time
I
F = 0.5 A to IR = 1 A; Irec = 0.25 A
-
13
22
ns
V
fr
Forward recovery voltage
I
F = 1 A; dIF/dt = 10 A/µs-
1
-
V
July 1998
2
Rev 1.200



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