MDF1922TH datasheet(1/6 Pages) MGCHIP

部件名	MDF1922TH

功能描述	Single N-channel Trench MOSFET 100V, 40A, 8.7m(ohm)

PDF	6 Pages

Scroll/Zoom	100%

制造商	MGCHIP [MagnaChip Semiconductor.]

网页	http://www.magnachip.co.kr

标志

1 / 6 page

Jan. 2015. Rev 1.0

MagnaChip Semiconductor Ltd.

1

Absolute Maximum Ratings (Ta = 25

oC)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current

(1)

TC=25

oC

ID

40

A

TC=100

oC

26

Pulsed Drain Current

IDM

160

Power Dissipation

TC=25

oC

PD

28

W

TC=100

oC

12

Single Pulse Avalanche Energy

EAS

(2)

400

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

(1)

RθJA

62.5

oC/W

Thermal Resistance, Junction-to-Case

RθJC

4.5

MDF1922

Single N-channel Trench MOSFET 100V, 40A, 8.7m

Ω

Features



VDS = 100V



ID = 40A @VGS = 10V



RDS(ON)

< 8.7

mΩ @VGS = 10V



100% UIL Tested

General Description

The MDF1922 uses advanced MagnaChip

’s MOSFET

Technology, which provides high performance in on-state

resistance, fast switching performance and excellent

quality. MDF1922 is suitable device for Synchronous

Rectification for Server / Adapter and general purpose

applications.

D

G

S

TO-220F

G

D

S

类似零件编号 - MDF1922TH

制造商	部件名	数据表	功能描述
MagnaChip Semiconductor...	MDF1921	985Kb / 6P	Single N-channel Trench MOSFET 100V, 60A, 4.8m(ohm)
MagnaChip Semiconductor...	MDF1921TH	985Kb / 6P	Single N-channel Trench MOSFET 100V, 60A, 4.8m(ohm)

More results

类似说明 - MDF1922TH

制造商	部件名	数据表	功能描述
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