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MDF1922TH 数据表(PDF) 4 Page - MagnaChip Semiconductor.

部件名 MDF1922TH
功能描述  Single N-channel Trench MOSFET 100V, 40A, 8.7m(ohm)
PDF  6 Pages
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制造商  MGCHIP [MagnaChip Semiconductor.]
网页  http://www.magnachip.co.kr
标志 MGCHIP - MagnaChip Semiconductor.

MDF1922TH 数据表(HTML) 4 Page - MagnaChip Semiconductor.

  MDF1922TH Datasheet HTML 1Page - MagnaChip Semiconductor. MDF1922TH Datasheet HTML 2Page - MagnaChip Semiconductor. MDF1922TH Datasheet HTML 3Page - MagnaChip Semiconductor. MDF1922TH Datasheet HTML 4Page - MagnaChip Semiconductor. MDF1922TH Datasheet HTML 5Page - MagnaChip Semiconductor. MDF1922TH Datasheet HTML 6Page - MagnaChip Semiconductor.  
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Jan. 2015. Rev 1.0
MagnaChip Semiconductor Ltd.
4
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.11 Transient Thermal Response
Curve
25
50
75
100
125
150
0
5
10
15
20
25
30
35
40
45
50
T
C, Case Temperature [
℃]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
-4
10
-3
10
-2
10
-1
10
0
10
1
※ Notes :
Duty Factor, D=t
1/t2
PEAK T
J = PDM * Z
θ JC* Rθ JC(t) + TC
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1, Rectangular Pulse Duration [sec]
0
5
10
15
20
25
30
35
40
0
1000
2000
3000
4000
5000
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
※ Notes ;
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
0
10
20
30
40
50
60
0
2
4
6
8
10
V
DS = 50V
※ Note : I
D = 50A
Q
G, Total Gate Charge [nC]
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
1000 ms
100 ms
1 ms
10 ms
DC
100 us
Operation in This Area
is Limited by R
DS(on)
Single Pulse
T
J=Max rated
T
C=25
℃
V
DS, Drain-Source Voltage [V]



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