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MDF1922TH 数据表(PDF) 3 Page - MagnaChip Semiconductor.

部件名 MDF1922TH
功能描述  Single N-channel Trench MOSFET 100V, 40A, 8.7m(ohm)
PDF  6 Pages
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制造商  MGCHIP [MagnaChip Semiconductor.]
网页  http://www.magnachip.co.kr
标志 MGCHIP - MagnaChip Semiconductor.

MDF1922TH 数据表(HTML) 3 Page - MagnaChip Semiconductor.

  MDF1922TH Datasheet HTML 1Page - MagnaChip Semiconductor. MDF1922TH Datasheet HTML 2Page - MagnaChip Semiconductor. MDF1922TH Datasheet HTML 3Page - MagnaChip Semiconductor. MDF1922TH Datasheet HTML 4Page - MagnaChip Semiconductor. MDF1922TH Datasheet HTML 5Page - MagnaChip Semiconductor. MDF1922TH Datasheet HTML 6Page - MagnaChip Semiconductor.  
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Jan. 2015. Rev 1.0
MagnaChip Semiconductor Ltd.
3
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
0
1
2
3
4
5
6
7
8
0
20
40
60
80
T
C = 25
oC
※ Notes :
V
DS = 10 V
V
GS, Gate-Source Voltage [V]
0.0
0.3
0.6
0.9
1.2
1.5
0
10
20
30
40
50
60
70
80
※ Notes :
V
GS = 0V
T
C = 25
℃
V
SD, Source-Drain Voltage [V]
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
※ Notes :
1. V
GS = 10 V
2. I
D = 50 A
T
J, Junction Temperature [
oC]
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
40
45
50
※ Notes :
I
D = 50A
T
A = 25
℃
V
GS, Gate to Source Volatge [V]
0
20
40
60
80
100
120
140
160
7.0
7.1
7.2
7.3
7.4
7.5
7.6
V
GS = 10V
I
D, Drain Current [A]
0
1
2
3
4
5
6
7
8
0
20
40
60
80
100
120
140
160
180
200
7.0 V
8.0 V
10 V
5.0 V
6.0 V
4.5 V
4.0 V
V
DS, Drain-Source Voltage [V]



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