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ESDAVLC5-4BX4 数据表(PDF) 2 Page - STMicroelectronics |
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ESDAVLC5-4BX4 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics ESDAVLC5-4BX4 2/8 DocID023365 Rev 2 1 Characteristics Figure 2. Electrical characteristics (definitions) Table 1. Absolute maximum ratings (Tamb = 25 °C) Symbol Parameter Value Unit VPP (1) Peak pulse voltage IEC 61000-4-2 contact discharge IEC 61000-4-2 air discharge 16 16 kV IPP Peak pulse current (8/20 µs) 2 A PPP Peak pulse power (8/20 µs) 30 W Tj Operating temperature range -30 to +85 °C Tstg Storage temperature range - 55 to +150 °C TL Maximum lead temperature for soldering during 10 s 260 °C 1. For a surge greater than the maximum values, the diode will fail in short-circuit. V I VCL VCL VBR VBR VRM VRM IRM IPP Slope: 1/Rd Symbol Parameter V = Breakdown voltage V = Stand-off voltage V = Clamping voltage I = Peak pulse current BR RM CL PP I = Leakage current @ V RM RM = Line capacitance CLINE R = Dynamic resistance D Table 2. Electrical characteristics (values, Tamb = 25 °C) Symbol Parameter Test conditions Value Unit Min. Typ. Max. VBR Breakdown voltage IR = 1 mA 5.5 V IRM Leakage current VRM = 3 V 50 nA VCL Clamping voltage IPP = 1 A, 8/20 µs 18 V Cline Line capacitance, I/O to GND VR = 0 V, Fosc = 1 MHz, Vosc = 30 mV 10 pF Rd Dynamic resistance, pulse width 100 ns I/O to GND 0.53 Ω GND to I/O 0.37 |
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