ESDAVLC5-4BX4 datasheet(3/8 Pages) STMICROELECTRONICS

3 / 8 page

DocID023365 Rev 2

3/8

ESDAVLC5-4BX4

Characteristics

Figure 3. Leakage current versus junction

temperature (typical values)

Figure 4. Junction capacitance versus reverse

applied voltage (typical values)

IR (nA)

0.01

0.1

100

125

150

IO/GND

Tj (°C)

0.00

2.00

4.00

6.00

8.00

10.00

12.00

14.00

Tj = 25 °C

IO/GND

C (pF)

VR (V)

Figure 5. ESD response to IEC 61000-4-2

(typical values, +8 kV contact discharge)

Figure 6. ESD response to IEC 61000-4-2

(typical values, -8 kV contact discharge)

10 V/div

20 ns/div

V : ESD peak voltage

V :clamping voltage @ 30 ns

V :clamping voltage @ 60 ns

V :clamping voltage @ 100 ns

56 V

22 V

21 V

15 V

10 V/div

20 ns/div

-48 V

-15 V

-10 V

V : ESD peak voltage

V :clamping voltage @ 30 ns

V :clamping voltage @ 60 ns

V :clamping voltage @ 100 ns

Figure 7. S21 attenuation measurement

Figure 8. TLP measurement

S21 (dB)

100k

10M

100M

10G

-21

-18

-15

-12

-9

-6

-3

IO1

IO2

IO3

IO4

F (Hz)

IPP (A)

VCL (V)

GND to I/O

I/O to GND

ESDAVLC5-4BX4 数据表(PDF) 3 Page - STMicroelectronics

ESDAVLC5-4BX4 数据表(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8

数据表下载