SMP75

Characteristics

Doc ID 5015 Rev 5

3/9

Table 2.

Symbol

Parameter

Value

Unit

Repetitive peak pulse current

10/1000 µs

8/20 µs

10/560 µs

5/310 µs

10/160 µs

1/20 µs

2/10 µs

75

250

100

120

150

250

250

A

8/20 µs

5

kA

Non repetitive surge peak on-state current (sinusoidal)

t = 0.2 s

t = 1 s

t = 2 s

t = 15 mn

14

8

6.5

2

A

I²t

I²t value for using

t = 16.6 ms

t = 20 ms

12

12.2

A²s

Storage temperature range

-55 to + 150

°C

Maximum junction temperature

150

°C

Maximum lead temperature for soldering during 10 s.

260

°C

1.

In fail safe mode, the device acts as a short circuit.

Table 3.

Thermal resistances

Symbol

Parameter

Value

Unit

Junction to ambient (with recommended footprint)

100

°C/W

Junction to leads

20

°C/W

Table 4.

Symbol

Parameter

Stand-off voltage

Breakdown voltage

Breakover voltage

Leakage current

Peak pulse current

Breakover current

Holding current

Continuous reverse voltage

C

Capacitance