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SMP75 数据表(PDF) 4 Page - STMicroelectronics

部件名 SMP75
功能描述  Trisil??for telecom equipment protection
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

SMP75 数据表(HTML) 4 Page - STMicroelectronics

  SMP75 Datasheet HTML 1Page - STMicroelectronics SMP75 Datasheet HTML 2Page - STMicroelectronics SMP75 Datasheet HTML 3Page - STMicroelectronics SMP75 Datasheet HTML 4Page - STMicroelectronics SMP75 Datasheet HTML 5Page - STMicroelectronics SMP75 Datasheet HTML 6Page - STMicroelectronics SMP75 Datasheet HTML 7Page - STMicroelectronics SMP75 Datasheet HTML 8Page - STMicroelectronics SMP75 Datasheet HTML 9Page - STMicroelectronics  
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Characteristics
SMP75
4/9
Doc ID 5015 Rev 5
Table 5.
Electrical characteristics - values (Tamb = 25 °C)
Order code
IRM @ VRM
IR
(1) @ V
R
Dynamic
VBO
Static
VBO @ IBO
IH
C(2)
max.
max.
max.
max.
max.
typ.
max.
µA
V
µA
V
V
V
mA
mA
pF
SMP75-8
2658
20
15
800
50
60
1.
IR measured at VR guaranteed VBR min ≥ VR
2.
VR = 2 V bias, VRMS = 1 V, F = 1 MHz
Figure 2.
Pulse waveform
Figure 3.
Non repetitive surge peak on-state
current versus overload duration
10 0
50
%I
PP
t
t
r
p
0
t
Repetitive peak pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
I
(A)
TSM
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
0
5
10
15
20
25
30
35
40
45
50
F=50Hz
Tj initial = 25°C
t(s)
Figure 4.
On-state voltage versus on-state
current (typical values)
Figure 5.
Relative variation of holding
current versus junction
temperature
I (A)
T
10
100
01
2345
678
Tj=25°C
V (V)
T
I [Tj] / I [Tj=25°C]
HH
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-40 -30 -20 -10
0
10
20
30
40
50
60
70
80
90 100 110 120 130
Tj(°C)



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