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TS617 数据表(PDF) 6 Page - STMicroelectronics |
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TS617 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 19 page ![]() Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) Electrical characteristics TS617 6/19 VOL Low level output voltage RL = 100 Ω -5.1 -5 V Tmin. < Tamb < Tmax. -5 Iout Isink Vout = -4 V 450 540 mA Tmin. < Tamb < Tmax. 510 Isource Vout = +4 V -550 -450 Tmin. < Tamb < Tmax. -490 Ishort circuit (limited by thermal shut down) Output to GND (limited by internal thermal shut-down) 800 Noise and distortion eN Equivalent input noise voltage F = 100 kHz 3.5 nV/ √Hz iNp Positive input noise current F = 100 kHz 39 pA/ √Hz iNn Positive input noise current F = 100 kHz 20 pA/ √Hz H2/H3 2nd and 3rd harmonics Vout = 2 Vp-p, gain = +4, F=6MHz RL = 100 Ω, H2 H3 -66 -73 dBc Power-down function Ipdw Consumption in power-down mode A1= 0, A0 = 0 90 300 µA Tmin. < Tamb < Tmax. 110 ton Time for power-down mode to operating mode A1 = A0 = 0 to A1 = A0 = 1 Vout = 4 Vdc, gain = +4 60 200 ns toff Time for operating mode to power-down mode A1 = A0 = 1 to A1 = A0 = 0 Vout = 4 Vdc, gain = +4 550 1000 ns Table 4. VCC = ±6 V, Tamb = 25° C, full power mode (unless otherwise specified) (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit |
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