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TS617 数据表(PDF) 4 Page - STMicroelectronics |
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TS617 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 19 page ![]() Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) Electrical characteristics TS617 4/19 VOH High level output voltage RL = 100 Ω RL = 25 Ω 1.6 1.5 1.68 1.58 V Tmin. < Tamb < Tmax. RL = 100 Ω RL = 25 Ω 1.6 1.5 VOL Low level output voltage RL = 100 Ω RL = 25 Ω -1.68 -1.57 -1.60 -1.50 V Tmin. < Tamb < Tmax. RL = 100 Ω RL = 25 Ω -1.6 -1.5 Iout Isink Vout = -1 V 300 350 mA Tmin. < Tamb < Tmax. 330 Isource Vout = +1 V -370 -300 Tmin. < Tamb < Tmax. -350 Ishort circuit (limited by thermal shut down) Output to GND 600 Noise and distortion eN Input noise voltage F = 100 kHz 3.5 nV/ √Hz iNp Positive input noise current F = 100 kHz 39 pA/ √Hz iNn Positive input noise current F = 100 kHz 20 pA/ √Hz H2/H3 2nd and 3rd harmonics Vout = 2 Vp-p, gain = +4, Rfb=390 Ω, F = 6 MHz RL = 25 Ω, H2 H3 -58 -68 dBc Power-down function Ipdw Consumption in power-down mode A1 = 0, A0 = 0 65 200 µA Tmin. < Tamb < Tmax. 80 ton Time for power-down mode to operating mode A1 = A0 = 0 to A1 = A0 = 1 Vout = 1 Vdc, gain = +4 80 200 ns toff Time for operating mode to power-down mode A1 = A0 = 1 to A1 = A0 = 0 Vout = 1 Vdc, gain = +4 450 1000 ns Table 3. VCC = ±2.5 V, Tamb = 25° C, full power mode (unless otherwise specified) (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit |
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