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TS617 数据表(PDF) 3 Page - STMicroelectronics |
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TS617 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 19 page ![]() Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) TS617 Electrical characteristics 3/19 2 Electrical characteristics Table 3. VCC = ±2.5 V, Tamb = 25° C, full power mode (unless otherwise specified) Symbol Parameter Test conditions Min. Typ. Max. Unit DC performance Vio Input offset voltage Tamb -10 2.5 10 mV Tmin. < Tamb < Tmax. 2.7 ΔVio Vio drift vs. temperature Tmin. < Tamb < Tmax. 5 μV/°C Iib+ Non-inverting input bias current Tamb -50 -15 +50 μA Tmin. < Tamb < Tmax. -20 Iib- Inverting input bias current Tamb -30 -11 -30 μA Tmin. < Tamb < Tmax. -12 CMR Common mode rejection ratio 20 log ( ΔVic/ΔVio) ΔVic = ±1 V 45 51 dB Tmin. < Tamb < Tmax. 50 SVR Supply voltage rejection ratio 20 log ( ΔVCC/ΔVio) ΔVCC = ±2 V to ±2.5 V 50 76 dB Tmin. < Tamb < Tmax. 55 PSRR Power supply rejection ratio 20 log ( ΔVCC/ΔVout) Gain = +4, Rfb = 390 Ω ΔVCC = ±100 mV at 100 kHz 50 dB ICC Supply current per operator Full power, no load 9 11 mA Tmin. < Tamb < Tmax. 10 Medium power, no load 7 8 mA Tmin. < Tamb < Tmax. 7.5 Low power, no load 2 3 mA Tmin. < Tamb < Tmax. 2.3 Dynamic performance and output characteristics Bw -3 dB bandwidth in small signal Small signal Vout =20 mVp-p RL = 100 Ω Gain = +2, Rfb = 620 Ω Gain = +4, Rfb = 390 Ω Gain = +8, Rfb = 390 Ω 70 125 105 55 MHz Gain = +4, medium power 90 Gain = +4, low power 33 ROL Open-loop transimpedance RL = 100 Ω,Vout = 2 Vp-p 50 110 k Ω Tmin. < Tamb < Tmax. 90 SR Slew rate Vout = 3 Vp-p, gain = +4, RL = 100 Ω 300 450 V/ μs Medium power 400 Low power 100 |
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