R5F104FAD datasheet(123/213 Pages) RENESAS

123 / 213 page

RL78/G14

2. ELECTRICAL SPECIFICATIONS (TA = -40 to +85

°C)

R01DS0053EJ0330 Rev. 3.30

Page 123 of 208

Aug 12, 2016

2.7

RAM Data Retention Characteristics

Note

The value depends on the POR detection voltage. When the voltage drops, the RAM data is retained before a POR reset

is effected, but RAM data is not retained when a POR reset is effected.

2.8

Flash Memory Programming Characteristics

Note 1.

1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the rewrite.

Note 2.

When using flash memory programmer and Renesas Electronics self-programming library

Note 3.

These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas Electronics

Corporation.

2.9

Dedicated Flash Memory Programmer Communication (UART)

(TA = -40 to +85°C, VSS = 0V)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Data retention supply voltage

VDDDR

1.46 Note

5.5

(TA = -40 to +85°C, 1.8 V

≤ VDD ≤ 5.5 V, VSS = 0 V)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

System clock frequency

fCLK

1.8 V

≤ VDD ≤ 5.5 V

MHz

Number of code flash rewrites

Notes 1, 2, 3

Cerwr

Retained for 20 years

TA = 85°C

1,000

Times

Number of data flash rewrites

Notes 1, 2, 3

Retained for 1 year

TA = 25°C

1,000,000

Retained for 5 years

TA = 85°C

100,000

Retained for 20 years

TA = 85°C

10,000

(TA = -40 to +85°C, 1.8 V

≤ EVDD0 = EVDD1 ≤ VDD ≤ 5.5 V, VSS = EVSS0 = EVSS1 = 0 V)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Transfer rate

During serial programming

115,200

1,000,000 bps

VDD

STOP instruction execution

Standby release signal

(interrupt request)

STOP mode

RAM data retention

Operation mode

VDDDR

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