TSZ182 datasheet(10/39 Pages) STMICROELECTRONICS

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Electrical characteristics

TSZ182

10/39

DocID029836 Rev 1

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

GBP

Gain bandwidth product

T = 25 °C, RL = 10

kΩ,

CL = 100 pF

MHz

-40 °C < T< 125 °C,

RL = 10

kΩ, CL = 100 pF

1.6

Φm

Phase margin

RL = 10

kΩ, CL = 100 pF

degrees

Gain margin

Slew rate (4)

T = 25 °C

2.9

4.7

V/µs

-40 °C < T< 125 °C

2.4

Settling time

To 0.1 %, Vin = 1.5 Vpp

600

To 0.01 %, Vin = 1 Vpp

µs

Equivalent input noise voltage

f = 1 kHz

nV/√Hz

f = 10 kHz

en-pp

Voltage noise

f = 0.1 to 10 Hz

0.4

µVpp

Channel separation

f = 100 Hz

135

tinit

Initialization time, G = 100 (5)

T = 25 °C

µs

-40 °C < T< 125 °C

100

Notes:

(1)See Section 5.5: "Input offset voltage drift over temperature". Input offset measurements are performed on x100 gain

configuration. The amplifiers and the gain setting resistors are at the same temperature.

(2)Guaranteed by design

(3)Tested on the MiniSO8 package, RF injection on the IN- pin

(4)Slew rate value is calculated as the average between positive and negative slew rates

(5)Initialization time is defined as the delay between the moment when supply voltage exceeds 2.2 V and output voltage

stabilization

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