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THS1040CPWR 数据表(PDF) 26 Page - Texas Instruments |
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THS1040CPWR 数据表(HTML) 26 Page - Texas Instruments |
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26 / 32 page ![]() THS1040 SLAS290C − OCTOBER 2001 − REVISED OCTOBER 2004 26 www.ti.com APPLICATION INFORMATION driving the VREF pin (continued) Note that the maximum current may be up to 30% higher. The user should ensure that VREF is driven from a low noise, low drift source, well decoupled to analog ground and capable of driving the maximum IREF. driving REFT and REFB (external ADC references, MODE = AGND) AVDD AGND AVDD AGND 2 k Ω REFT REFB To ADC Core To ADC Core Figure 36. Equivalent Circuit of REFT and REFB Inputs reference decoupling VREF pin When the on-chip reference generator is enabled, the VREF pin should be decoupled to the circuit board’s analog ground plane close to the THS1040 AGND pin via a 1- µF capacitor and a 0.1-µF ceramic capacitor. REFT and REFB pins In any mode of operation, the REFT and REFB pins should be decoupled as shown in Figure 37. Use short board traces between the THS1040 and the capacitors to minimize parasitic inductance. THS1040 REFT REFB 0.1 µF 10 µF 0.1 µF 0.1 µF Figure 37. Recommended Decoupling for the ADC Reference Pins REFT and REFB BIASREF pin When using the on-chip BIASREF source, the BIASREF pin should be decoupled to the circuit board’s analog ground plane close to the THS1040 AGND pin via a 1- µF capacitor and a 0.1-µF ceramic capacitor. |
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