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ADP1610ARMZ-R7 数据表(PDF) 3 Page - Analog Devices |
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ADP1610ARMZ-R7 数据表(HTML) 3 Page - Analog Devices |
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3 / 16 page ![]() ADP1610 Rev. 0 | Page 3 of 16 SPECIFICATIONS VIN = 3.3 V, TA = −40°C to +85°C, unless otherwise noted. All limits at temperature extremes are guaranteed by correlation and characterization using standard statistical quality control (SQC), unless otherwise noted. Table 1. Parameter Symbol Conditions Min Typ Max Unit SUPPLY Input Voltage VIN 2.5 5.5 V Quiescent Current Nonswitching State IQ VFB = 1.3 V, RT = VIN 390 600 µA Shutdown I QSD V SD = 0 V 0.01 10 µA Switching State1 IQSW fSW = 1.23 MHz, no load 1 2 mA OUTPUT Output Voltage VOUT VIN 12 V Load Regulation ILOAD = 10 mA to 150 mA, VOUT = 10 V 0.05 mV/mA Overall Regulation Line, load, temperature ±3 % REFERENCE Feedback Voltage VFB 1.212 1.230 1.248 V Line Regulation VIN = 2.5 V to 5.5 V −0.15 +0.15 %/V ERROR AMPLIFIER Transconductance gm ∆I = 1 µA 100 µA/V Voltage Gain AV 60 dB FB Input Bias Current VFB = 1.23 V 10 nA SWITCH SW On Resistance RON ISW = 1.0 A 200 400 mΩ SW Leakage Current VSW = 12 V 0.01 20 µA Peak Current Limit2 ICLSET 2.0 A OSCILLATOR Oscillator Frequency fOSC RT = GND 0.49 0.7 0.885 MHz RT = IN 0.89 1.23 1.6 MHz Maximum Duty Cycle DMAX COMP = open, VFB = 1 V, RT = GND 78 83 90 % SHUTDOWN Shutdown Input Voltage Low VIL Nonswitching state 0.6 V Shutdown Input Voltage High VIH Switching state 2.2 V Shutdown Input Bias Current I SD V SD = 3.3 V 0.01 1 µA SOFT START SS Charging Current VSS = 0 V 3 µA UNDERVOLTAGE LOCKOUT3 UVLO Threshold VIN rising 2.2 2.4 2.5 V UVLO Hysteresis 220 mV 1 This parameter specifies the average current while switching internally and with SW (Pin 5) floating. 2 Guaranteed by design and not fully production tested. 3 Guaranteed by characterization. |
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