| 制造商 | 部件名 | 数据表 | 功能描述 |
 STMicroelectronics |
SCTW40N120G2V
|
205Kb / 12P |
Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 package
09-Jun-2021 |
|
SCTWA90N65G2V
|
249Kb / 12P |
Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ in an HiP247 long leads package
10-Aug-2020 |
|
SCTW90N65G2V
|
402Kb / 12P |
Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C)in an HiP247 package
DS11832 - Rev 5 - July 2019 |
|
SCTW100N120G2AG
|
217Kb / 11P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package
23-Jul-2020 |
|
SCTW35N65G2VAG
|
206Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package
09-Sep-2020 |
|
SCTW60N120G2AG
|
197Kb / 11P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
18-May-2020 |
|
SCTWA35N65G2VAG
|
243Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package
11-Aug-2020 |
|
SCTWA40N120G2AG
|
257Kb / 12P |
Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package
22-Nov-2021 |
|
SCTWA60N120G2AG
|
242Kb / 12P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package
16-Dec-2020 |
|
SCT10N120AG
|
238Kb / 14P |
Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package
21-Sep-2022 |