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ID2006SEC-R1 数据表 (PDF) - Wuxi Chipown Micro-electronics limited

ID2006SEC-R1 Datasheet PDF - Wuxi Chipown Micro-electronics limited
部件名 ID2006SEC-R1
下载  ID2006SEC-R1 下载
文件大小   570.42 Kbytes
  7 Pages
制造商  CHIPOWN [Wuxi Chipown Micro-electronics limited]
网页  https://www.chipown.com.cn/en/index.html
标志 CHIPOWN - Wuxi Chipown Micro-electronics limited
功能描述 High-Side & Low-Side Gate Drive IC

ID2006SEC-R1 Datasheet (PDF)

Go To PDF Page 下载 数据表
ID2006SEC-R1 Datasheet PDF - Wuxi Chipown Micro-electronics limited

部件名 ID2006SEC-R1
下载  ID2006SEC-R1 Click to download

文件大小   570.42 Kbytes
  7 Pages
制造商  CHIPOWN [Wuxi Chipown Micro-electronics limited]
网页  https://www.chipown.com.cn/en/index.html
标志 CHIPOWN - Wuxi Chipown Micro-electronics limited
功能描述 High-Side & Low-Side Gate Drive IC

ID2006SEC-R1 数据表 (HTML) - Wuxi Chipown Micro-electronics limited


ID2006SEC-R1 产品详情

General description
The ID2006 is a high voltage, high speed power MOSFET
driver with independent high and low side referenced output
channels based on P_SUB P_EPI process. The floating
channel can be used to drive an N-channel power MOSFET
in the high side configuration which operates up to 200 V.
Logic inputs are compatible with standard CMOS or LSTTL
output, down to 3.3V logic. The output drivers feature a high
pulse current buffer stage designed for minimum driver
cross-conduction.

Application
 Small and medium- power motor driver
 Power MOSFETS driver
 Half−Bridge Power Converters
 Full-Bridge Power Converters
 Any Complementary Drive Converters

Features
 Fully operational to+200 V
 3.3V and 5V input logic compatible
 dV/dt Immunity ±50 V/nsec
 Gate drive supply range from 6 V to 18 V
 Typically Source / Sink current capability 1 A/1 A
 Typically -9V negative Vs bias capability




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类似说明 - ID2006SEC-R1

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