ID2006

Chipown

www.chipown.com

Wuxi Chipown Microelectronics Limited

Rev.1.0

1/7

High-Side & Low-Side Gate Drive IC

General description

The ID2006 is a high voltage, high speed power MOSFET

driver with independent high and low side referenced output

channels based on P_SUB P_EPI process. The floating

channel can be used to drive an N-channel power MOSFET

in the high side configuration which operates up to 200 V.

Logic inputs are compatible with standard CMOS or LSTTL

output, down to 3.3V logic. The output drivers feature a high

pulse current buffer stage designed for minimum driver

cross-conduction.

Application



Small and medium- power motor driver



Power MOSFETS driver



Half−Bridge Power Converters



Full-Bridge Power Converters



Any Complementary Drive Converters

Features



Fully operational to+200 V



3.3V and 5V input logic compatible



dV/dt Immunity ±50 V/nsec



Gate drive supply range from 6 V to 18 V



Typically Source / Sink current capability 1 A/1 A



Typically -9V negative Vs bias capability

Package/Order Information

ID2006

8

7

6

5

1

2

3

4

LO

COM

LIN

HIN

VCC

VB

HO

VS

Order code

Package

ID2006SEC-R1

SOP8

Typical Circuit

ID2006

8

7

6

5

CBS

Rcs V

1

2

3

4

VDC, up to 200V

M

LO

COM

LIN

HIN

VCC

VB

HO

VS

MCU

15V

Rcs U

Rcs W

IF U

IF V

IF W

BSD

RB

Q1

Q2

Q3

Q5

Q6

Q4

1

2

3

4

5

Note 1: RB value suggest 10 ohms, ultra fast recovery or schottky diode should be used as BSD

Note 2: CBS value according to PWM control condition

Note 3: Driver circuit should be adjust according to the MOSFETs be used

Note 4: Pull down resistor between Gate and Source of MOSFETs, 10k ohms is suggested

Note 5: Resistors between HIN/LIN and MCU, recommended value is 100 to 1k ohms