STGWA15M120DF3 数据表(PDF) - STMicroelectronics

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STGWA15M120DF3 数据表 (PDF) - STMicroelectronics

STGWA15M120DF3 Datasheet PDF - STMicroelectronics


部件名	STGWA15M120DF3

下载	STGWA15M120DF3 下载

文件大小	1054.34 Kbytes

页	19 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

STGWA15M120DF3 Datasheet (PDF)

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STGWA15M120DF3 Datasheet PDF - STMicroelectronics


部件名	STGWA15M120DF3

下载	STGWA15M120DF3 Click to download

文件大小	1054.34 Kbytes

页	19 Pages

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

功能描述	Trench gate field-stop IGBT, M series 1200 V, 15 A low loss

STGWA15M120DF3 数据表 (HTML) - STMicroelectronics

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STGWA15M120DF3 产品详情

Description
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Features
• 10 µs of short-circuit withstand time
• VCE(sat) = 1.85 V (typ.) @ IC = 15 A
• Tight parameters distribution
• Safer paralleling
• Low thermal resistance
• Soft and fast recovery antiparallel diode

Applications
• Industrial drives
• UPS
• Solar
• Welding

类似零件编号 - STGWA15M120DF3

制造商	部件名	数据表	功能描述
STMicroelectronics	STGWA15H120DF2	832Kb / 18P	Trench gate field-stop IGBT, H series 1200 V, 15 A high speed 04-Mar-2015
Inchange Semiconductor ...	STGWA15H120DF2	586Kb / 3P	IGBT
STMicroelectronics	STGWA15H120F2	801Kb / 17P	Trench gate field-stop IGBT, H series 1200 V, 15 A high speed 01-Apr-2015
STMicroelectronics	STGWA15S120DF3	741Kb / 18P	Trench gate field-stop IGBT, S series 1200 V, 15 A low drop 18-Dec-2014

类似说明 - STGWA15M120DF3

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	FGH15T120SMD	257Kb / 9P	1200 V, 15 A Field Stop Trench IGBT
STMicroelectronics	STGB15M65DF2	1Mb / 19P	Trench gate field-stop IGBT M series, 650 V, 15 A low loss 13-Nov-2015
	STGF15M65DF2	910Kb / 15P	Trench gate field-stop IGBT M series, 650 V 15 A low loss 14-Oct-2015
	STGP15M65DF2	900Kb / 17P	Trench gate field-stop IGBT M series, 650 V, 15 A low loss 13-Nov-2015
	STGW15S120DF3	741Kb / 18P	Trench gate field-stop IGBT, S series 1200 V, 15 A low drop 18-Dec-2014
	STGW25M120DF3	1Mb / 18P	Trench gate field-stop IGBT, M series 1200 V, 25 A low loss 31-Oct-2014
	STGW40M120DF3	1Mb / 18P	Trench gate field-stop IGBT, M series 1200 V, 40 A low loss 10-Nov-2014
	STGP15M120F3	429Kb / 15P	Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package 01-Aug-2018
	STG15M120F3D8	224Kb / 8P	1200 V, 15 A trench gate field‑stop M series low‑loss IGBT die in D8 packing 18-Jan-2022
	STG15M120F3D7	263Kb / 10P	Trench gate field-stop 1200 V, 15 A low-loss M series IGBT die in D7 packing 16-Aug-2022

关于 STMicroelectronics

Stmicroelectronics是位于瑞士日内瓦的跨国电子和半导体制造商。

该公司为汽车，工业和消费者市场的各种应用提供了广泛的产品，包括微控制器，传感器，功率放大器和集成电路。

Stmicroelectronics成立于1987年，在100多个国家 /地区开展业务，是世界上最大的半导体公司之一。

*此信息仅供一般参考，对于因上述信息造成的任何损失或损害，我们概不负责。

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