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SCT20N120AG 数据表 (PDF) - STMicroelectronics

部件名 SCT20N120AG
功能描述  Automotive-grade silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an HiP247 package
文件大小   487.52 Kbytes
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

SCT20N120AG 数据表 (PDF) - STMicroelectronics



类似零件编号 - SCT20N120AG

制造商部件名数据表功能描述
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STMicroelectronics		 SCT20N120 STMICROELECTRONICS-SCT20N120 Datasheet
499Kb / 13P		 Very high operating temperature capability
17-Dec-2015
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Inchange Semiconductor ...		 SCT20N120H ISC-SCT20N120H Datasheet
369Kb / 2P		 SiC N-Channel MOSFET
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STMicroelectronics		 SCT20N120H STMICROELECTRONICS-SCT20N120H Datasheet
686Kb / 16P		 Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C), in an H²PAK-2 package
13-Dec-2019
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类似说明 - SCT20N120AG

制造商部件名数据表功能描述
logo
STMicroelectronics		 SCTH40N120G2V7AG STMICROELECTRONICS-SCTH40N120G2V7AG Datasheet
606Kb / 14P		 Automotive-grade silicon carbide Power MOSFET, 1200 V, 33 A,75 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
DS12969 - Rev 1 - April 2019
SCTW100N65G2AG STMICROELECTRONICS-SCTW100N65G2AG Datasheet
423Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 650 V, 100 A,20 mΩ (typ., TJ=25 °C), in an HiP247™ package
DS11643 - Rev 2 - November 2018
SCTW90N65G2V STMICROELECTRONICS-SCTW90N65G2V Datasheet
402Kb / 12P		 Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C)in an HiP247 package
DS11832 - Rev 5 - July 2019
SCTW100N120G2AG STMICROELECTRONICS-SCTW100N120G2AG Datasheet
217Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package
23-Jul-2020
SCTW35N65G2VAG STMICROELECTRONICS-SCTW35N65G2VAG Datasheet
206Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package
09-Sep-2020
SCTW60N120G2AG STMICROELECTRONICS-SCTW60N120G2AG Datasheet
197Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
18-May-2020
SCTWA35N65G2VAG STMICROELECTRONICS-SCTWA35N65G2VAG Datasheet
243Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package
11-Aug-2020
SCTWA40N120G2AG STMICROELECTRONICS-SCTWA40N120G2AG Datasheet
257Kb / 12P		 Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package
22-Nov-2021
SCTWA60N120G2AG STMICROELECTRONICS-SCTWA60N120G2AG Datasheet
242Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package
16-Dec-2020
SCT10N120AG STMICROELECTRONICS-SCT10N120AG Datasheet
238Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package
21-Sep-2022
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