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SCTWA40N120G2AG 数据表 (PDF) - STMicroelectronics

部件名 SCTWA40N120G2AG
功能描述  Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package
文件大小   257.69 Kbytes
Html View  1   2   3   4   5   6   7   8   9    Next
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

SCTWA40N120G2AG 数据表 (PDF) - STMicroelectronics



类似零件编号 - SCTWA40N120G2AG

制造商部件名数据表功能描述
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STMicroelectronics		 SCTWA40N120G2V STMICROELECTRONICS-SCTWA40N120G2V Datasheet
228Kb / 12P		 Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 long leads package
22-Jul-2021
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类似说明 - SCTWA40N120G2AG

制造商部件名数据表功能描述
logo
STMicroelectronics		 SCTW40N120G2VAG STMICROELECTRONICS-SCTW40N120G2VAG Datasheet
210Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 33 A, 75 mΩ (typ., TJ = 25 °C) in an HiP247 package
12-Nov-2020
SCTW40N120G2V STMICROELECTRONICS-SCTW40N120G2V Datasheet
205Kb / 12P		 Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 package
09-Jun-2021
SCTH40N120G2V7AG STMICROELECTRONICS-SCTH40N120G2V7AG Datasheet
606Kb / 14P		 Automotive-grade silicon carbide Power MOSFET, 1200 V, 33 A,75 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
DS12969 - Rev 1 - April 2019
SCTW100N120G2AG STMICROELECTRONICS-SCTW100N120G2AG Datasheet
217Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 75 A,30 mΩ (typ., TJ=25 °C), in an HiP247 package
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SCTW35N65G2VAG STMICROELECTRONICS-SCTW35N65G2VAG Datasheet
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SCTW60N120G2AG STMICROELECTRONICS-SCTW60N120G2AG Datasheet
197Kb / 11P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package
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SCTWA35N65G2VAG STMICROELECTRONICS-SCTWA35N65G2VAG Datasheet
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SCTWA60N120G2AG STMICROELECTRONICS-SCTWA60N120G2AG Datasheet
242Kb / 12P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package
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SCT10N120AG STMICROELECTRONICS-SCT10N120AG Datasheet
238Kb / 14P		 Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ (typ., TJ = 150 °C) in an HiP247 package
21-Sep-2022
SCTH100N120G2-AG STMICROELECTRONICS-SCTH100N120G2-AG Datasheet
439Kb / 14P		 Automotive-grade silicon carbide Power MOSFET, 1200 V, 75 A, 30 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package
23-Jul-2020
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