SCTWA35N65G2V pdf, SCTWA35N65G2V 功能描述, SCTWA35N65G2V 数据表, SCTWA35N65G2V view ::: ALLDATASHEET :::

部件名	SCTWA35N65G2V

功能描述	Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247 long leads package

文件大小	479.53 Kbytes

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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类似零件编号 - SCTWA35N65G2V

制造商	部件名	数据表	功能描述
STMicroelectronics	SCTWA35N65G2V-4	195Kb / 12P	Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package 02-Dec-2020
Inchange Semiconductor ...	SCTWA35N65G2V4AG	375Kb / 4P	SiC N-Channel MOSFET
STMicroelectronics	SCTWA35N65G2VAG	243Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package 11-Aug-2020

制造商	部件名	数据表	功能描述
STMicroelectronics	SCTH35N65G2V-7	378Kb / 15P	Silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package 17-Dec-2020
	SCTWA90N65G2V-4	239Kb / 13P	Silicon carbide Power MOSFET 650 V, 18 mΩ typ., 119 A in an HiP247-4 package 25-Nov-2020
	SCTWA90N65G2V	249Kb / 12P	Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ in an HiP247 long leads package 10-Aug-2020
	SCTH35N65G2V-7AG	620Kb / 15P	Automotive-grade silicon carbide Power MOSFET, 650 V, 45 A,55 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package 24-Jan-2020
	SCTW90N65G2V	402Kb / 12P	Silicon carbide Power MOSFET 650 V, 119 A, 18 mΩ (typ., TJ = 25 °C)in an HiP247 package DS11832 - Rev 5 - July 2019
	SCTW35N65G2VAG	206Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 package 09-Sep-2020
	SCTW60N120G2AG	197Kb / 11P	Automotive-grade silicon carbide Power MOSFET 1200 V, 52 A, 45 mΩ (typ., TJ = 25 °C) in an HiP247 package 18-May-2020
	SCTWA35N65G2VAG	243Kb / 12P	Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package 11-Aug-2020
	SCTWA40N120G2AG	257Kb / 12P	Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package 22-Nov-2021
	SCTWA60N120G2AG	242Kb / 12P	Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package 16-Dec-2020