IPD60R180P7 datasheet(3/14 Pages) INFINEON

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600VCoolMOSªP7PowerTransistor

IPD60R180P7

Rev.2.1,2017-02-17

Final Data Sheet

1Maximumratings

atTj=25°C,unlessotherwisespecified

Table2Maximumratings

Values

Min.

Typ.

Max.

Parameter

Symbol

Unit Note/TestCondition

Continuous drain current

TC=25°C

TC=100°C

Pulsed drain current

ID,pulse

TC=25°C

Avalanche energy, single pulse

EAS

ID=4A; VDD=50V; see table 10

Avalanche energy, repetitive

EAR

0.28

ID=4A; VDD=50V; see table 10

Avalanche current, single pulse

IAS

4.0

MOSFET dv/dt ruggedness

dv/dt

V/ns

VDS=0...400V

Gate source voltage (static)

VGS

-20

static;

Gate source voltage (dynamic)

VGS

-30

AC (f>1 Hz)

Power dissipation

Ptot

TC=25°C

Storage temperature

Tstg

-55

150

°C

Operating junction temperature

-55

150

°C

Mounting torque

Ncm

Continuous diode forward current

TC=25°C

Diode pulse current

IS,pulse

TC=25°C

Reverse diode dv/dt

dv/dt

V/ns

VDS=0...400V,ISD<=18A,Tj=25°C

see table 8

Maximum diode commutation speed

dif/dt

900

µs VDS=0...400V,ISD<=18A,Tj=25°C

see table 8

Insulation withstand voltage

VISO

Vrms,TC=25°C,t=1min

1) Limited by Tj max. Maximum Duty Cycle D = 0.50

2) Pulse width tp limited by Tj,max

3) Identical low side and high side switch with identical Rg

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