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IPD60R180P7 数据表(PDF) 1 Page - Infineon Technologies AG

部件名 IPD60R180P7
功能描述  600V CoolMOS짧 P7 Power Transistor
PDF  14 Pages
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制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

IPD60R180P7 数据表(HTML) 1 Page - Infineon Technologies AG

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1
IPD60R180P7
Rev.2.1,2017-02-17
Final Data Sheet
tab
1
2
3
DPAK
Drain
Pin 2, Tab
Gate
Pin 1
Source
Pin 3
MOSFET
600VCoolMOSªP7PowerTransistor
TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor
highvoltagepowerMOSFETs,designedaccordingtothesuperjunction
(SJ)principleandpioneeredbyInfineonTechnologies.The600V
CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It
combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease
ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody
diodeagainsthardcommutationandexcellentESDcapability.
Furthermore,extremelylowswitchingandconductionlossesmake
switchingapplicationsevenmoreefficient,morecompactandmuch
cooler.
Features
•Suitableforhardandsoftswitching(PFCandLLC)duetoanoutstanding
commutationruggedness
•Significantreductionofswitchingandconductionlosses
•ExcellentESDrobustness>2kV(HBM)forallproducts
•BetterRDS(on)/packageproductscomparedtocompetitionenabledbya
lowRDS(on)*A(below1Ohm*mm²)
•LargeportfoliowithgranularRDS(on)selectionqualifiedforavarietyof
industrialandconsumergradeapplicationsaccordingtoJEDEC(J-STD20
andJESD22)
Benefits
•Easeofuseandfastdesign-inthroughlowringingtendencyandusage
acrossPFCandPWMstages
•Simplifiedthermalmanagementduetolowswitchingandconduction
losses
•Increasedpowerdensitysolutionsenabledbyusingproductswith
smallerfootprintandhighermanufacturingqualitydueto>2kVESD
protection
•Suitableforawidevarietyofapplicationsandpowerranges
Applications
PFC,hardswitchingPWMandresonantswitchingpowerstages.e.g.PC
Silverbox,Adapter,LCD&PDPTV,Lighting,Server,Telecom&UPS
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
180
m
Ω
Qg.typ
25
nC
ID,pulse
53
A
Eoss@400V
2.6
µJ
Body diode di/dt
900
A/µs
Type/OrderingCode
Package
Marking
RelatedLinks
IPD60R180P7
PG-TO 252-3
60R180P7
see Appendix A


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