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IPD60R180P7 数据表(PDF) 6 Page - Infineon Technologies AG |
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IPD60R180P7 数据表(HTML) 6 Page - Infineon Technologies AG |
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6 / 14 page ![]() 6 600VCoolMOSªP7PowerTransistor IPD60R180P7 Rev.2.1,2017-02-17 Final Data Sheet Table7Reversediodecharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode forward voltage VSD - 0.9 - V VGS=0V,IF=5.6A,Tj=25°C Reverse recovery time trr - 175 - ns VR=400V,IF=2A,diF/dt=100A/µs; see table 8 Reverse recovery charge Qrr - 1.3 - µC VR=400V,IF=2A,diF/dt=100A/µs; see table 8 Peak reverse recovery current Irrm - 15 - A VR=400V,IF=2A,diF/dt=100A/µs; see table 8 |
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