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IPD60R180P7 数据表(PDF) 5 Page - Infineon Technologies AG

部件名 IPD60R180P7
功能描述  600V CoolMOS짧 P7 Power Transistor
PDF  14 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  INFINEON [Infineon Technologies AG]
网页  http://www.infineon.com
标志 INFINEON - Infineon Technologies AG

IPD60R180P7 数据表(HTML) 5 Page - Infineon Technologies AG

  IPD60R180P7 Datasheet HTML 1Page - Infineon Technologies AG IPD60R180P7 Datasheet HTML 2Page - Infineon Technologies AG IPD60R180P7 Datasheet HTML 3Page - Infineon Technologies AG IPD60R180P7 Datasheet HTML 4Page - Infineon Technologies AG IPD60R180P7 Datasheet HTML 5Page - Infineon Technologies AG IPD60R180P7 Datasheet HTML 6Page - Infineon Technologies AG IPD60R180P7 Datasheet HTML 7Page - Infineon Technologies AG IPD60R180P7 Datasheet HTML 8Page - Infineon Technologies AG IPD60R180P7 Datasheet HTML 9Page - Infineon Technologies AG Next Button
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5
600VCoolMOSªP7PowerTransistor
IPD60R180P7
Rev.2.1,2017-02-17
Final Data Sheet
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Drain-source breakdown voltage
V(BR)DSS
600
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
V(GS)th
3
3.5
4
V
VDS=VGS,ID=0.28mA
Zero gate voltage drain current
IDSS
-
-
-
10
1
-
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
Gate-source leakage current
IGSS
-
-
1000
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
-
0.145
0.341
0.180
-
Ω
VGS=10V,ID=5.6A,Tj=25°C
VGS=10V,ID=5.6A,Tj=150°C
Gate resistance
RG
-
11
-
Ω
f=1MHz,opendrain
Table5Dynamiccharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Input capacitance
Ciss
-
1081
-
pF
VGS=0V,VDS=400V,f=250kHz
Output capacitance
Coss
-
19
-
pF
VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related
1)
Co(er)
-
33
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time
related
2)
Co(tr)
-
311
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
14
-
ns
VDD=400V,VGS=13V,ID=5.6A,
RG=10
Ω;seetable9
Rise time
tr
-
12
-
ns
VDD=400V,VGS=13V,ID=5.6A,
RG=10
Ω;seetable9
Turn-off delay time
td(off)
-
85
-
ns
VDD=400V,VGS=13V,ID=5.6A,
RG=10
Ω;seetable9
Fall time
tf
-
8
-
ns
VDD=400V,VGS=13V,ID=5.6A,
RG=10
Ω;seetable9
Table6Gatechargecharacteristics
Values
Min.
Typ.
Max.
Parameter
Symbol
Unit Note/TestCondition
Gate to source charge
Qgs
-
6
-
nC
VDD=400V,ID=5.6A,VGS=0to10V
Gate to drain charge
Qgd
-
8
-
nC
VDD=400V,ID=5.6A,VGS=0to10V
Gate charge total
Qg
-
25
-
nC
VDD=400V,ID=5.6A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.2
-
V
VDD=400V,ID=5.6A,VGS=0to10V
1)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
2)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V



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